RB411D
Diodes
Schottky barrier diode
RB411D
!Applications Low power rectification For switching power supply !External dimensions (Units : mm)
2.
9±0.
2 1.
9±0.
2 0.
95 0.
95
0.
2 1.
1 + −0.
1
0.
8±0.
1
(All leads have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current ∗ Junction temperature Storage temperature
∗ 60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 20 0.
5 3 125 −40~+125
Unit V V A A
°C °C
!Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Forward voltage Reverse cu...