MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
25.
0+/-0.
3 7.
0+/-0.
5 11.
0+/-0.
3
Silicon MOSFET Power
Transistor 520MHz,60W DESCRIPTION
RD60HUF1 is a MOS FET type
transistor specifically designed for UHF High power amplifiers applications.
OUTLINE DRAWING
1
24.
0+/-0.
6
4-C2
•High power and High Gain: Pout60W, Gp7.
7dB @Vdd=12.
5V,f=520MHz •High Efficiency: 55%typ.
on UHF Band
2 3
10.
0+/-0.
3
FEATURES
R1.
6+/-0.
15
0.
1 -0.
01
+0.
05
APPLICATION
For output stage of high power amplifiers in UHF Band mobile radio sets.
5.
0+/-0.
3
4.
5+/-0.
7 6.
2+/-0.
7
18.
0+/-0.
3
3.
3+/-0.
2
PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C...