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PTF211802A

Part Number PTF211802A
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Published Apr 16, 2005
Detailed Description PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally ...
Datasheet PTF211802A





Overview
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V...






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