DISCRETE SEMICONDUCTORS
DATA SHEET
PVB42004X
NPN microwave power
transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
handbook, halfpage
PVB42004X
PINNING - SOT445A PIN 1 2 3 collector...