DISCRETE SEMICONDUCTORS
DATA SHEET
PXB16050U
NPN microwave power
transistor
Product specification Supersedes data of June 1992 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
APPLICATIONS Common-base class C power amplifiers at frequencies betwe...