01/99
B-31
IF1330
N-Channel Silicon Junction Field-Effect
Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
– 20 V 10 mA 225 mW 1.
8 mW/°C – 65°C to 200°C
At 25°C free air temperature: Static Electrical Characteristics
IF1330 Min Max Unit
Process NJ132H Test Conditions
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS IGSS VGS(OFF) IDSS
– 20 – 0.
35 5 – 0.
1 – 1.
5 20
V nA V mA
IG = – 1 µA, VD...