B32
IF1331 N-Channel Silicon Junction Field-Effect
Transistor
02/2004
• Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25°C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
– 20 V 10 mA 225 mW 1.
8 mW/°C – 65°C to 200°C
At 25°C free air temperature: Static Electrical Characteristics
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance
Equivalent Short Circuit ...