Philips Semiconductors
Preliminary specification
Silicon Diffused Power
Transistor
BU2722DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of high resolution monitors.
Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation curr...