Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V Ths ≤ 25 ˚C IC = 7.
0 A; IB = 1.
75 A f = 16 kHz ICsat = 7.
0 A; f = 16kHz TYP.
7.
0 1.
5 MAX.
...