Philips Semiconductors
Preliminary specification
Silicon Diffused Power
Transistor
BU2730AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP.
9 3.
5 MAX.
1700 825 16 40 125 5.
0 4.
5 UNIT V V A A W V A µs
Tmb ≤ 2...