Philips Semiconductors
Objective specification
Silicon Diffused Power
Transistor
BU4515DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak va...