S2005AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER
TRANSISTOR
Highvoltage,high-speed switching
npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PM
CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.
5 2.
0 1.
0 UNIT V V A A W V A V s
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 4.
5A; IB = 2...