Transistors with built-in Resistor
UN1231/1231A
Silicon
NPN epitaxial planer
transistor
Unit: mm
6.
9±0.
1 2.
5±0.
1 1.
0
For amplification of the low frequency
0.
4
1.
5 1.
5 R0.
9 R0.
9
1.
0±0.
1
q
0.
85
0.
55±0.
1
0.
45±0.
05
s Absolute Maximum Ratings
Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT* Tj Tstg
(Ta=25˚C)
Ratings 20 60 20 50 0.
7 1.
5 1.
0 150 –55 to +150 Unit
3
2
1
2.
5
2.
5
V
UN1231 Collector to emitter voltage UN1231A Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter M Type Mold Package
V A A W ˚C ˚C
R1(1kΩ)
Internal Connection
1.
25±0.
05
C
B
R2 (47kΩ)
* Prin...