DATA SHEET
MOS FIELD EFFECT POWER
TRANSISTORS
µPA1700A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management of notebook computers.
8
PACKAGE DIMENSIONS
(in millimeter)
5
FEATURES
• Low On-Resistance RDS(on)1 = 27 mΩ Max.
(VGS = 10 V, ID = 3.
5 A) RDS(on)2 = 50 mΩ Max.
(VGS = 4 V, ID = 3.
5 A) • Low Input Capacitance
1.
44 1.
8 MAX.
1 5.
37 MAX.
+0.
10 –0.
05
1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain
4
6.
0 ±0.
3 4.
4 0.
8
Ciss = 820 pF Typ.
• Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8)
0.
15
0.
05 MIN.
0.
5 ±0.
2 0.
10
1.
27 0.
78 MAX.
0.
40 +0.
10 –0.
...