DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1707
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
is N-Channel MOS Field Effect
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
This product
Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
• Low on-resistance RDS(on)1 = 10.
0 mΩ (TYP.
) (VGS = 10 V, ID = 5.
0 A)
1.
44
RDS(on)2 = 12.
5 mΩ (TYP.
) (VGS = 4.
5 V, ID = 5.
0 A)
1.
8 MAX.
1 5.
37 MAX.
4
6.
0 ±0.
3 4.
4
+0.
10 –0.
05
0.
8
RDS(on)3 = 14.
0 mΩ (TYP.
) (VGS = 4.
0 V, ID = 5.
0 A) • Low Ciss: Ciss = 1400 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
0.
15
0.
05 M...