DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1708
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management switch.
8
PACKAGE DRAWINGS (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
• Low on-resistance RDS(on)1 = 18.
0 mΩ (TYP.
) (VGS = 10 V, ID = 3.
5 A)
1.
44
1 5.
37 MAX.
+0.
10 –0.
05
4
6.
0 ±0.
3 4.
4 0.
8
RDS(on)2 = 28.
0 mΩ (TYP.
) (VGS = 4.
5 V, ID = 3.
5 A) • Low Ciss : Ciss = 730 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1.
8 MAX.
0.
15
0.
05 MIN.
0.
5 ±0.
2 0.
10
1.
27 0.
78 MAX.
0.
40
+0.
10 –0.
05
0.
12 M
ORDERING INFORMATION...