DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1709
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management switch.
FEATURES
• Low on-resistance RDS(on)1 = 9.
3 mΩ (TYP.
) (VGS = 10 V, ID = 4.
5 A) RDS(on)2 = 13.
8 mΩ (TYP.
) (VGS = 4.
5 V, ID = 4.
5 A) • Low Ciss : Ciss = 1850 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5
1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
1
4 5.
37 Max.
+0.
10 –0.
05
6.
0 ±0.
3 4.
4 0.
8
1.
8 Max.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.
44
0.
15
0.
05 Min.
µ PA1709G
0.
5 ±0.
2 0...