DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1716
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
• Low on-resistance RDS(on)1 = 12.
5 mΩ TYP.
(VGS = –10 V, ID = –4 A) RDS(on)2 = 17.
0 mΩ TYP.
(VGS = –4.
5 V, ID = –4 A) RDS(on)3 = 19.
0 mΩ TYP.
(VGS = –4.
0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5
1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
1
4 5.
37 Max.
+0.
10 –0.
05
6.
0 ±0.
3 4.
4 0.
8
0.
15
ORDERING INFORMATION
PART NU...