DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1717
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
The µPA1717 is P-Channel MOS Field Effect
Transistor designed for power management applications of notebook computers.
FEATURES
• Low on-state resistance RDS(on)1 = 33 mΩ MAX.
(VGS = −10 V, ID = −3 A)
1.
44
RDS(on)2 = 59 mΩ MAX.
(VGS = −4.
5 V, ID = −3 A)
1.
8 MAX.
1 5.
37 MAX.
4
6.
0 ±0.
3 4.
4
+0.
10 –0.
05
• Low Ciss : Ciss = 830 pF TYP.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8)
0.
8
0.
15
0.
05 MIN.
0.
5 ±0.
2 0.
10
1.
27 0.
78 MAX.
0.
40
+0.
10 –0.
05
ORDERING INFORMATION
PART...