DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1756
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect
Transistor designed for power management application of notebook computers, and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.
37 Max.
+0.
10 –0.
05
FEATURES
• Dual MOS FET chips in small package • 2.
5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
0 A) RDS(on)2 = 40 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
0 A) • Low Ciss Ciss = 800 pF TYP.
• Built-in G-S protection diode • Small and surface mount package (Power S...