DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1757
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect
Transistor designed for power management application of notebook computers, and Li-ion battery application.
8
Package Drawing (Unit : mm)
5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2
Features
• Dual MOS FET chips in small package • 2.
5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.
) (VGS = 4.
5 V, ID = 3.
5 A)
1.
44
RDS(on)2 = 32 mΩ (MAX.
) (VGS = 2.
5 V, ID = 3.
5 A)
1.
8 Max.
1 5.
37 Max.
4
6.
0 ±0.
3 4.
4
+0.
10 –0.
05
• Low Ciss
0.
8
Ciss = 750 pF Typ.
0.
05 Min.
• Small and surface...