DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1804
N-CHANNEL MOS FIELD EFFECT
TRANSISTOR FOR SWITCHING
DESCRIPTION
This product is a switching device which can be driven directly by a 4.
5 V power source.
The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.
2 MAX.
1.
0±0.
05 0.
25
° 3° +5 –3°
FEATURES
• Can be driven by a 4.
5 V power source • Low on-state resistance RDS(on)1 = 23 mΩ MAX.
(VGS = 10 V, ID = 4.
0 A) RDS(on)2 = 32 mΩ MAX.
(VGS = 4.
5 V, ID = 4.
0 A) • Built-in G-S protection diode agains...