3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
• 7 dBm P1dB TYPICAL AT 1.
9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.
9 GHz at -3 dB (UPC2762T)
Gain, GS (dB)
24 22 UPC2763T 20 18 16 14 UPC2762T 12
UPC2762T UPC2763T
GAIN vs.
FREQUENCY VCC = 3.
0 V, ICC = 27 mA
• HIGH GAIN: 20 dB at 1.
9 GHz (UPC2763T) • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process.
The NESAT III process produces
transistors with fT approaching 20 GHz.
These amplifiers were designed for 900 MHz and 1.
9 GHz receivers in cellular, cordless telephone and PCN application...