DatasheetsPDF.com

UPD45128841

Part Number UPD45128841
Manufacturer NEC
Description 128M-bit Synchronous DRAM 4-bank/ LVTTL
Published Apr 17, 2005
Detailed Description DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description...
Datasheet UPD45128841





Overview
DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features • Fully Synchronous Dynamic RAM, with all signals referenced to a posit...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)