NPN EPITAXIAL SILICON
TRANSISTORS
High Voltage
Transistor
SOT— —23
WMBT3904
! !
Power Dissipation: 225mW Collector Current: Max.
0.
2A
1.
BASE
2.
EMITTER
3.
COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units
MIN.
40 60 6.
0 50 40 70 100 60 30 650 MAX.
Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current BVCEO BVCBO BVEBO ICEX hFE1 hFE2 hFE3 hFE4 hFE5 BVESAT1 BVESAT2 VCE(SAT)1 VCE(SAT)2 fT IC=1mA IC=100µA IE=10µA VCE=30V, VBE=3V VCE=1V, IC=100µA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA,IB=5mA IC=10mA, IB=1mA IC=50mA, IB=...