WMBT5551LT1
NPN Silicon
Transistor
1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value
160
180
COLLECTOR 3
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
Unit Vdc Vdc Vdc mAdc
6.
0 600
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 Unit mW mW/°C °C/W mW mW/°C RqJA TJ, Tstg – 55 to +150 °C/W °C
DEVICE MAR...