NPN EPITAXIAL SILICON
TRANSISTORS
High Voltage
Transistor Die Size 0.
6*0.
6mm Power Dissipation: 225mW Collector Current: Max.
500mA Bonding Pad Size Emitoe 100*100mkm Base 100*100mkm
WMBTA42
SOT— —23
*
*
* *
1.
BASE
2.
EMITTER
3.
COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Characteristic Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Symbol VCEO VCBO ICBO IEBO hFE Test Conditions IC=1.
0mA IC=100uA VCB=260V VEB=6V VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, I...