NPN SILICON PLANAR RF
TRANSISTOR
ISSUE 2 MARCH 94 FEATURES * High fT, 1.
3GHz * Low noise 5dB at 500MHz * Power output at 500MHz 175mW
ZTX325
C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Mean Collector Current (Averaged over 100µs) Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IAV ICM Ptot Tj:Tstg 30 15 2.
5 25 50 350
E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C
E
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current E...