NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE
TRANSISTORS
ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.
5 Amp continuous current * Ptot=1 Watt
ZTX656 ZTX657
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX656 200 200 5 1 0.
5 1
E-Line TO92 Compatible ZTX657 300 300 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdo...