PNP SILICON PLANAR MEDIUM POWER HIGH GAIN
TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.
2 Amps * Very low saturation voltage
ZTX795A
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -140 -140 -5 -1 -0.
5 1.
5 1 5.
7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with...