SOT323 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– DECEMBER 1998
1
1
ZUMD54 ZUMD54C
3 2
3
2 3
1
SINGLE ZUMD54 Partmark: D8
COMMON CATHODE ZUMD54C Partmark: D8C
FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS.
PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10mA Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25°C Storage Temperature Range JunctionTemperature ¤ t1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW °C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
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