N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=40Ω ZVNL535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 350 90 800 ± 20 700 -55 to +150 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State...

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