SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEMENTARY TYPE PARTMARKING DETAIL 7 ZVP3310F D S ZVN3310F MR G ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN.
BVDSS VGS(th) IGSS IDSS ID(on) -300 20 50 50 15 5 8 8 8 8 -100 -1.
5 -3.
5 -20 -1 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 75 -1.
2 ± 20 UNIT V ...

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