Part Number
|
APL1001J |
Manufacturer
|
Advanced Power Technology |
Description
|
N-Channel Power MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
G S
D
SOT-227 S
D
G S
APL1001J 1000V 18.0A 0.60W
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV®
SINGL...
|
Datasheet
|
APL1001J
|
Overview
G S
D
SOT-227 S
D
G S
APL1001J 1000V 18.
0A 0.
60W
ISOTOP®
"UL Recognized" File No.
E145592 (S)
POWER MOS IV®
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
VDSS ID
IDM, lLM VGS
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG TL
Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
APL1001J 1000 18 72 ±30 520 4.
16
-55 to 150 300
UNIT Volts
Amps
Volts Watts W/°C
°C
...
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