Part Number
|
APT1001R3BN |
Manufacturer
|
Advanced Power Technology |
Description
|
MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parame...
|
Datasheet
|
APT1001R3BN
|
Overview
D
TO-247
G S
APT1001R1BN 1000V 10.
5A 1.
10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.
0A 1.
30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 10.
5 42 ± 30 310 2.
48
1000 10 40
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic...
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