Part Number
|
APT1002R4BN |
Manufacturer
|
Advanced Power Technology |
Description
|
MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
D
TO-247
G S
APT1002RBN
®
1000V 7.0A 2.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
|
Datasheet
|
APT1002R4BN
|
Overview
D
TO-247
G S
APT1002RBN
®
1000V 7.
0A 2.
00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1002R4BN 1000V 6.
5A 2.
40Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1002RBN APT 1002R4BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 7.
0 28 ±30 240 1.
96
1000 6.
5 26
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / ...
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