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Part Number
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APT1004R2KN |
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Manufacturer
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Advanced Power Technology |
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Description
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MOSFET |
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Published
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Apr 23, 2005 |
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Detailed Description
|
D
TO-220
G S
APT1004RKN APT1004R2KN
1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE ...
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Datasheet
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APT1004R2KN
|
Overview
D
TO-220
G S
APT1004RKN APT1004R2KN
1000V 3.
6A 4.
00 Ω 1000V 3.
5A 4.
20 Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter V DSS ID IDM V GS PD Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C, Derate Above 25°C
1
All Ratings: T C = 25°C unless otherwise specified.
APT1004R2KN 1000 3.
5 14.
0 ±30 125 -55 to 150 APT1004RKN 1000 3.
6 14.
4
UNIT Volts Amps Amps Volts Watts °C
TJ,TSTG Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number BVDSS IDSS IGSS ID(ON) Drain-Source Breakdown Vol...
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