Part Number
|
APT10M09LVR |
Manufacturer
|
Advanced Power Technology |
Description
|
MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
APT10M09B2VR APT10M09LVR
100V 100A 0.009W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel...
|
Datasheet
|
APT10M09LVR
|
Overview
APT10M09B2VR APT10M09LVR
100V 100A 0.
009W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
D G S
• 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10M09 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pu...
Similar Datasheet