Part Number
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APT1201R6BVR |
Manufacturer
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Advanced Power Technology |
Description
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Power MOSFET |
Published
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Apr 23, 2005 |
Detailed Description
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APT1201R6BVR
1200V 8A 1.600Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode ...
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Datasheet
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APT1201R6BVR
|
Overview
APT1201R6BVR
1200V 8A 1.
600Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1201R6BVR UNIT Volts Amps
1200 8 32 ±30 ±40 280 2.
24 -55 to ...
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