Part Number
|
APT5025BN |
Manufacturer
|
Advanced Power Technology |
Description
|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Published
|
Apr 23, 2005 |
Detailed Description
|
D
TO-247
G S
APT5025BN 500V
®
23.0A 0.25Ω 21.0A 0.30Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG...
|
Datasheet
|
APT5025BN
|
Overview
D
TO-247
G S
APT5025BN 500V
®
23.
0A 0.
25Ω 21.
0A 0.
30Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT5030BN 500V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 5025BN APT 5030BN UNIT Volts Amps
500 23 92 ± 30 310 2.
48
500 21 84
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Cond...
Similar Datasheet