APT6015B2VR 600V 38A 0.
150Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ • Faster Switching • Lower Leakage • 100% Avalanche Tested • New T-MAX™ Package (Clip-mounted TO-247 Package) G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT6015B2VR UNIT Volts Amps 600 38 152...

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