| Part Number | APT6030BN |
| Manufacturer | Advanced Power Technology |
| Title | N-Channel MOSFET |
| Description | D TO-247 G S APT6030BN 600V ® 23.0A 0.30Ω 22.0A 0.33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source... |
| Features |
0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
22 0.30
Ohms
RDS(ON)
0.33 250 1000 ± 100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (...
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| File Size | 51.12KB |
| Datasheet |
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APT6030BVFR : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pluse 84 A PD Total Dissipation @TC=25℃ 298 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.42 ℃/W APT6030BVFR isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT6030BVFR ELECTRICAL CHARACTERISTICS .
APT6030BVFR : APT6030BVFR 600V 21A 0.300W POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter All Ratings: TC = 25°C unless otherwise specified. APT6030BVFR UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current .
APT6030BVR : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pluse 84 A PD Total Dissipation @TC=25℃ 298 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.42 ℃/W APT6030BVR isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT6030BVR ELECTRICAL CHARACTERISTICS TC.
APT6030BVR : APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 D3PAK SVR • Faster Switching • Avalanche Energy Rated • Lower Leakage D • TO-247 or Surface Mount D3PAK Package G MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ .