Part Number
|
APT8035JN |
Manufacturer
|
Advanced Power Technology |
Description
|
Power MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
D
S G D
S
G S
SO
2 T-
27
APT8030JN APT8035JN
800V 800V
27.0A 0.30Ω 25.0A 0.35Ω
ISOTOP®
"UL Recognized" File N...
|
Datasheet
|
APT8035JN
|
Overview
D
S G D
S
G S
SO
2 T-
27
APT8030JN APT8035JN
800V 800V
27.
0A 0.
30Ω 25.
0A 0.
35Ω
ISOTOP®
"UL Recognized" File No.
E145592 (S)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
®
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C unless otherwise specified.
APT 8030JN APT 8035JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
800 27 108 ± 30 520 4.
16
800 25 100
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
and Induct...
Similar Datasheet