Part Number
|
HYB5116400BJ-70 |
Manufacturer
|
Siemens |
Description
|
4M x 4-Bit Dynamic RAM |
Published
|
Apr 23, 2005 |
Detailed Description
|
4M x 4-Bit Dynamic RAM
HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70
Advanced Information
• • •
4 194 304 words b...
|
Datasheet
|
HYB5116400BJ-70
|
Overview
4M x 4-Bit Dynamic RAM
HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns
• •
Single + 5 V (± 10 %) supply Low power dissipation max.
550 active mW (-50 version) max.
495 active mW (-60 version) max.
440 active mW (-70 version) 11 mW standby (TTL) 5.
5.
mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS...
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