8M × 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Information • • 8 388 608 words by 36-Bit organization in 2 banks Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time Hyper page mode (EDO) capability 25 ns cycle time Single + 5 V (± 10 %) supply Low power dissipation max.
7260 mW active CMOS – 132 mW standby TTL – 264 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 24 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.
75 mm (1250 mil) height Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages 2048 refresh cycles / 32 ms Optimized ...

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