DISCRETE SEMICONDUCTORS
DATA SHEET
LAE4002S
NPN microwave power
transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile • Excellent performance and reliability.
APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.
A miniature ceramic enc...