DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC144EEF
NPN resistor-equipped
transistor
Preliminary specification 1999 May 27
Philips Semiconductors
Preliminary specification
NPN resistor-equipped
transistor
FEATURES • Built-in bias resistors R1 and R2 (typ.
47 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped
transistor in an SC-89 (SOT490) plastic package.
PINNING
MGA893 - 1
PDTC144EEF
handbook, halfpage
3 R1 1 R2
3
1 Top view
2
MAM412
2
Fig.
1 Simplif...