LRS1331 Data Sheet FEATURES • Flash Memory and SRAM • Stacked Die Chip Scale Package • 72-ball 8 mm × 11 mm CSP plastic package • Power supply: 2.
7 V to 3.
6 V • Operating temperature: -25°C to +85°C • Flash Memory – Access time (MAX.
): 90 ns – Operating current (MAX.
) (The current for F-VCC pin and F-VCCW pin): – Read: 25 mA (tCYCLE = 200 ns) – Word write: 57 mA – Block erase: 42 mA – Standby current (the current for F-VCC pin): 15 µA (MAX.
F-RP ≤ GND ± 0.
2 V) – Optimized array blocking architecture – Two 4K-word boot blocks – Six 4K-word parameter blocks Stacked Chip 16M Flash Memory and 4M SRAM – Thirty-one 32K-word main blocks – Bottom boot location – Extended cycling capability – 100,00...

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