LS830 LS831 LS832 LS833
Linear Integrated Systems
FEATURES
ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |∆VGS1-2 /∆T|= 5µV/°C max.
IG = 80fA TYP.
en= 70nV/√Hz TYP.
CISS= 3pf MAX.
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each
Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA
D1 2 D2
6 D2
1 S1
7 G2
G1
S2 BOTTOM VIEW
22 X 20 MILS Maximu...