LS843 LS844 LS845
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE LOW LEAKAGE LOW DRIFT ULTRA LOW OFFSET VOLTAGE
ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
en= 3nV/√Hz TYP.
IG = 15pA TYPs.
|∆VGS1-2 /∆T|= 5µV/°C max.
IVGS1-2I= 1mV max.
ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature
-65° to +150°C +150°C
D1 S1 G1 G2 S2 D2 31 X 32 MILS
G1
3
5
S2
D1 2
6 D2
Maximum Voltage and Current for Each
Transistor NOTE 1 Gate Voltage to Drain or Source 60V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 60V 50mA
1 S1
7 G2
Maximum Power Dissipation Device Dissipation @ Fre...